HGTD10N50F1S |
RFQ for HGTD10N50F1S |
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| Product | Manufacturers | Pack | D/C |
| HGTD10N50F1S | - | - | 02+ |
The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and HGTD10N50F1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low power integrated circuits.
Typical Application |
Features |
| • Power Supplies• Motor Drives• Protective Circuits | • 10A, 400V and 500V• VCE(ON) 2.5V Max.• TFALL £1.4ms• Low On-State Voltage• Fast Switching Speeds• High Input Impedance |